Normal-state dielectric and transport properties of in-doped Bi-Pb-Sr-Ca-Cu-O
Identifieur interne : 00EE08 ( Main/Repository ); précédent : 00EE07; suivant : 00EE09Normal-state dielectric and transport properties of in-doped Bi-Pb-Sr-Ca-Cu-O
Auteurs : RBID : Pascal:02-0454552Descripteurs français
- Pascal (Inist)
- Propriété diélectrique, Phénomène transport, Dopage, Constante diélectrique, Perte diélectrique, Densité porteur charge, Conductivité électrique, Dépendance température, Concentration impureté, Polarisation, Impureté, Distorsion réseau, Supraconducteur haute température, Bismuth oxyde, Plomb oxyde, Calcium oxyde, Cuivre oxyde, Indium oxyde, Strontium oxyde, Bi1.84Pb0.34Sr1.91Ca2.03Cu3.06InxOy, Bi Ca Cu In O Pb Sr, 7722, 7472H.
- Wicri :
- concept : Dopage.
English descriptors
- KwdEn :
- Bismuth oxides, Calcium oxides, Carrier density, Copper oxides, Dielectric losses, Dielectric properties, Doping, Electrical conductivity, High-Tc superconductors, Impurities, Impurity density, Indium oxides, Lattice distortion, Lead oxides, Permittivity, Polarization, Strontium oxides, Temperature dependence, Transport processes.
Abstract
The effect of indium doping on the normal-state transport and dielectric properties of the Bi1.84Pb0.34Sr1.91Ca2.03Cu3.06InxOy (0 ≤ x ≤ 0.15) has been investigated. The dielectric constant, loss tangent, carrier concentration and electrical resistivity were measured at room temperature as a function of indium concentration. The dielectric constant is found to increase with increasing dopant concentration possibly due to increase in polarization. Impurities in any crystalline lattice generally cause deformation of the surrounding volume and modification in the local fields. The loss tangent of the indium doped-system decreased with increasing dopant concentration. Decrease in the loss tangent with increase in the dopant concentration indicates the decrease in the dielectric losses in the sample during doping. The carrier concentration is found to decrease with increasing indium concentration. This could be due to charge imbalance, which leads to a decrease in the number of holes in the system. Consequently, the electrical resistivity at 50°C increased with the dopant concentration. Also, above x = 0.05 dopant concentration there was a rapid rise in electrical resistivity, possibly due to disorder in the Cu-O2 planes. The temperature dependence of the electrical resistivity above room temperature is consistent with metallic behavior.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Normal-state dielectric and transport properties of in-doped Bi-Pb-Sr-Ca-Cu-O</title><author><name sortKey="Nkum, R K" uniqKey="Nkum R">R. K. Nkum</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Kwame Nkrumah University of Science and Technology</s1><s2>Kumasi</s2><s3>GHA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Ghana</country><wicri:noRegion>Kumasi</wicri:noRegion></affiliation></author><author><name sortKey="Gyekye, M O" uniqKey="Gyekye M">M. O. Gyekye</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Kwame Nkrumah University of Science and Technology</s1><s2>Kumasi</s2><s3>GHA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Ghana</country><wicri:noRegion>Kumasi</wicri:noRegion></affiliation></author><author><name sortKey="Boakye, F" uniqKey="Boakye F">F. Boakye</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Kwame Nkrumah University of Science and Technology</s1><s2>Kumasi</s2><s3>GHA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Ghana</country><wicri:noRegion>Kumasi</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0454552</idno><date when="2002">2002</date><idno type="stanalyst">PASCAL 02-0454552 INIST</idno><idno type="RBID">Pascal:02-0454552</idno><idno type="wicri:Area/Main/Corpus">00E929</idno><idno type="wicri:Area/Main/Repository">00EE08</idno></publicationStmt><seriesStmt><idno type="ISSN">0038-1098</idno><title level="j" type="abbreviated">Solid state commun.</title><title level="j" type="main">Solid state communications</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Bismuth oxides</term><term>Calcium oxides</term><term>Carrier density</term><term>Copper oxides</term><term>Dielectric losses</term><term>Dielectric properties</term><term>Doping</term><term>Electrical conductivity</term><term>High-Tc superconductors</term><term>Impurities</term><term>Impurity density</term><term>Indium oxides</term><term>Lattice distortion</term><term>Lead oxides</term><term>Permittivity</term><term>Polarization</term><term>Strontium oxides</term><term>Temperature dependence</term><term>Transport processes</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Propriété diélectrique</term><term>Phénomène transport</term><term>Dopage</term><term>Constante diélectrique</term><term>Perte diélectrique</term><term>Densité porteur charge</term><term>Conductivité électrique</term><term>Dépendance température</term><term>Concentration impureté</term><term>Polarisation</term><term>Impureté</term><term>Distorsion réseau</term><term>Supraconducteur haute température</term><term>Bismuth oxyde</term><term>Plomb oxyde</term><term>Calcium oxyde</term><term>Cuivre oxyde</term><term>Indium oxyde</term><term>Strontium oxyde</term><term>Bi1.84Pb0.34Sr1.91Ca2.03Cu3.06InxOy</term><term>Bi Ca Cu In O Pb Sr</term><term>7722</term><term>7472H</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The effect of indium doping on the normal-state transport and dielectric properties of the Bi<sub>1.84</sub>Pb<sub>0.34</sub>Sr<sub>1.91</sub>Ca<sub>2.03</sub>Cu<sub>3.06</sub>In<sub>x</sub>O<sub>y</sub> (0 ≤ x ≤ 0.15) has been investigated. The dielectric constant, loss tangent, carrier concentration and electrical resistivity were measured at room temperature as a function of indium concentration. The dielectric constant is found to increase with increasing dopant concentration possibly due to increase in polarization. Impurities in any crystalline lattice generally cause deformation of the surrounding volume and modification in the local fields. The loss tangent of the indium doped-system decreased with increasing dopant concentration. Decrease in the loss tangent with increase in the dopant concentration indicates the decrease in the dielectric losses in the sample during doping. The carrier concentration is found to decrease with increasing indium concentration. This could be due to charge imbalance, which leads to a decrease in the number of holes in the system. Consequently, the electrical resistivity at 50°C increased with the dopant concentration. Also, above x = 0.05 dopant concentration there was a rapid rise in electrical resistivity, possibly due to disorder in the Cu-O<sub>2</sub> planes. The temperature dependence of the electrical resistivity above room temperature is consistent with metallic behavior.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0038-1098</s0></fA01><fA02 i1="01"><s0>SSCOA4</s0></fA02><fA03 i2="1"><s0>Solid state commun.</s0></fA03><fA05><s2>122</s2></fA05><fA06><s2>10</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Normal-state dielectric and transport properties of in-doped Bi-Pb-Sr-Ca-Cu-O</s1></fA08><fA11 i1="01" i2="1"><s1>NKUM (R. K.)</s1></fA11><fA11 i1="02" i2="1"><s1>GYEKYE (M. O.)</s1></fA11><fA11 i1="03" i2="1"><s1>BOAKYE (F.)</s1></fA11><fA14 i1="01"><s1>Department of Physics, Kwame Nkrumah University of Science and Technology</s1><s2>Kumasi</s2><s3>GHA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA20><s1>569-573</s1></fA20><fA21><s1>2002</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10917</s2><s5>354000101762960120</s5></fA43><fA44><s0>0000</s0><s1>© 2002 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>18 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>02-0454552</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Solid state communications</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The effect of indium doping on the normal-state transport and dielectric properties of the Bi<sub>1.84</sub>Pb<sub>0.34</sub>Sr<sub>1.91</sub>Ca<sub>2.03</sub>Cu<sub>3.06</sub>In<sub>x</sub>O<sub>y</sub> (0 ≤ x ≤ 0.15) has been investigated. The dielectric constant, loss tangent, carrier concentration and electrical resistivity were measured at room temperature as a function of indium concentration. The dielectric constant is found to increase with increasing dopant concentration possibly due to increase in polarization. Impurities in any crystalline lattice generally cause deformation of the surrounding volume and modification in the local fields. The loss tangent of the indium doped-system decreased with increasing dopant concentration. Decrease in the loss tangent with increase in the dopant concentration indicates the decrease in the dielectric losses in the sample during doping. The carrier concentration is found to decrease with increasing indium concentration. This could be due to charge imbalance, which leads to a decrease in the number of holes in the system. Consequently, the electrical resistivity at 50°C increased with the dopant concentration. Also, above x = 0.05 dopant concentration there was a rapid rise in electrical resistivity, possibly due to disorder in the Cu-O<sub>2</sub> planes. 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